Vishay Intertechnology, Inc. is broadening its optoelectronics portfolio with the introduction of a new 890 nm high speed infrared (IR) emitting diode in a clear, untinted leaded plastic package. Based on surface emitter technology, the Vishay Semiconductors TSHF5211 combines an excellent -1.0 mV/K temperature coefficient of VF with higher radiant intensity and faster rise and fall times than previous-generation devices. The emitter diode released offers high typical radiant intensity of 235 mW/sr at a 100 mA drive current, which is 50 % higher than previous-generation solutions.

With fast switching times of 15 ns, low typical forward voltage of 1.5 V, and a narrow +- 10deg angle of half intensity, the device will serve as a high intensity emitter for smoke detectors and industrial sensors. In these applications, the TSHF5211 offers good spectral matching with silicon photodetectors. RoHS-compliant, halogen-free, and Vishay Green, the device is lead (Pb)-free and capable of lead (Pb)-free selling up to 260 degC.

Samples and production quantities of the TSHF5211 are available now, with lead times of 20 weeks for large orders.