Everspin Technologies, Inc. announced that it commenced shipment of pre-production customer samples of its 28 nm 1-Gigabit (Gb) Spin Torque Transfer Magnetoresistive Random Access Memory (STT-MRAM) product in December 2018. This achievement follows Everspin’s successful commercialization of its 40 nm 256 Mb STT-MRAM and builds upon months of close work with customers and manufacturing partners to mature this product technology. These are the world’s first 1 Gb STT-MRAM parts that meet customer specifications for endurance, performance and reliability in persistent write buffer applications. Everpin’s STT-MRAM devices enable enterprise infrastructure providers to increase the reliability and performance of systems where high performance data persistence is critical by delivering protection against power loss without the use of supercapacitors or batteries. Everspin’s 1 Gb product family includes both 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a similar BGA package to Everspin’s existing portfolio of 256 Mb parts, providing a fourfold increase in density in the same physical space. Production ramp for the 1 Gb products is scheduled to begin in the second half of 2019.