Vishay Intertechnology Inc. released two new 100 V n-channel TrenchFET(R) power MOSFETs that extend Vishay's ThunderFET(R) technology to smaller package sizes. The SiB456DK and SiA416DJ are the industry's first 100 V n-channel devices in the compact, thermally enhanced PowerPAK(R) SC-75 1.6 mm by 1.6 mm and PowerPAK SC-70 2 mm by 2 mm footprint areas to offer on-resistance of less than 200 and 100 milliohms, respectively. The MOSFETs released are optimized for boost converters, low-power DC/AC inverters, and primary side switching in miniature DC/DC converters for telecom bricks, point-of-load applications, and LED lighting in portable equipment.

For designers, the devices' ultra-compact PowerPAK SC-75 and PowerPAK SC-70 packages save PCB space in these applications, while their low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency. In addition, the MOSFETs' on-resistance rating down to 4.5 V simplifies gate drives.