Richardson Electronics, Ltd. announced the availability of SemiQ's 2nd generation silicon carbide power switches, 1200V 80mO SiC MOSFETs. These MOSFETs complement SemiQ's existing SiC rectifiers at 650V, 1200V, and 1700V. SemiQ has engineered two new MOSFETs, GP2T080A120U (TO-247-3L) and GP2T080A120H (TO-247-4L), to provide the best trade-off of conduction and switching losses.

These new products give designers more flexibility over a broader range of applications in comparison to other devices on the market. SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies and data centers and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy silicon IGBTs, SemiQ's MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight, and cooling requirements.