- Start mass production from
- Support the S-band and L-band by extending the range of
- S-band focuses on high output power, low power consumption (700mW), and the L-band focuses on low power consumption (33% lower than existing
- Start mass production from
The development of a pump laser for Raman amplifiers that support the S-band and L-band was conducted and achieved as part of the
Background
As data transmission speed increases, the transmission distance decreases due to degradation of the OSNR (Note 1) on the receiving side. In particular, when existing communication systems are used at faster transmission speeds the role of the Raman amplifier, which can amplify optical output power without attenuation of the signal light quality, has become even more important. Also, because the bandwidth of the signal expands as a result of high-speed transmission, it is necessary to extend the bandwidth in order to enable high volume transmission. Thus, Raman amplifiers, which make it possible to amplify the signal light source based on the selection of the pump laser wavelength, offer the most flexibility for optical amplification.
We have contributed to the advancement of optical communications for over 20 years as a leading company in the manufacture of pump lasers, a key component of Raman amplifiers.
Details
Concerning our FRL1441U Series pump laser for Raman amplifiers, in addition to the 700mW C-band pump laser developed last year, the new lineup will be expanded to include products for S-band and L-band applications. With consideration for the energy shift from short wavelength to long wavelength due to the impact of stimulated Raman scattering during optical transmission, we focused on high output power, low power consumption for S-band applications and lower power consumption design for L-band applications. The designs were optimized accordingly, and we developed pump lasers with 700mW output for S-band applications (Fig. 2) and 500mW output, low power consumption (33% lower compared to existing
Using this product, it will be possible to reduce the space required by using a single pump laser instead of the previous two pump lasers required for achieving higher output power. At the same time, the reduced power consumption will contribute to reducing the power consumption of the Raman amplifier. Also, with the expanded lineup, it will be possible to supply components for Raman amplifiers that can selectively amplify the signal light source from the S-band through the L-band, thus contributing to the realization of ultra-high speed, high volume transmission networks. Main characteristics Model FRL1441U Series (Characteristics of the newly developed pump laser for the S-band and L-band) Bandwidth S-band L-band Optical output power (mW) 700 600 500 Power consumption (W) Max. 14 Max. 10 Max. 10 Operating conditions Ts=35°C, Tc=70°C(EOL)
(note 1)OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio
(note 2)InP (Indium Phosphide): A III-V compound semiconductor that is used in the manufacture of laser diode chips and high speed transistors
We will exhibit this new product at OFS 2023 scheduled to be held on
OFC 2023
Achieved 800mW output with a pump laser for C-band Raman amplifiers
Based on the "
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