Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces high efficiency, GaN-based differential mode development boards that can operate up to 30 MHz.

These development boards are designed for class-E applications, such as wireless charging, but can be used for any application where a low-side switch is utilized. Examples include, but are not limited to, push-pull converters, current-mode class-D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

These development boards feature 200 V rated eGaN FETs. The amplifiers are set to operate in differential mode and can be re-configured to operate in single-ended mode and include the gate driver and logic supply regulator.

All three boards have common preference specifications. The operating load conditions, including configuration, determine the optimal design load voltage and resistance. The device parameters for each board are given in the following table:

Demonstration Board
Part Number

    

Featured
eGaN® FET
Part Number

    

VDS
(max)

    

RDS(on)
(max)

    

COSS
(max)

    

Pulsed ID
(max)

EPC9052

    

EPC2012C

     200 V     100 mΩ     85 pF     22 A

EPC9053

    

EPC2019

     200 V     50 mΩ     150 pF     42 A

EPC9054

    

EPC2010C

     200 V     25 mΩ     320 pF     90 A
                   

Quick Start Guides, containing set-up procedures, circuit diagram, performance curves, bill of material and Gerber files for the boards are provided on-line at http://epc-co.com/epc/Products/DemoBoards.aspx

Price and Availability

The EPC9052/9053/9054 are priced at $158.13 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement-mode gallium nitride based power management technology. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation