Robert B. Davies

HVVi Semiconductors is a fabless semiconductor company located in Phoenix, Arizona that manufactures high performance silicon RF power transistors. The company’s patented HVVFET™ is an impressive transistor architecture that combines high current density with high voltage operation. The transistor structure greatly reduces device parasitics which results in frequency performance greater than 10 times that of other vertical transistors, and has superior gain, linearity and ruggedness over bipolar transistors. In 2008, HVVi launched its first product families for the pulsed RF transistor market. Pulsed RF transistors are used in a variety of applications such as military/avionics, medical, and industrial technologies. These markets have been historically served by bipolar transistor technology, and LDMOS has made little penetration due to reliability issues. HVVi is poised to disrupt bipolar’s hold on the market due to the HVVFET’s superior gain, linearity, and ruggedness performance improvement over bipolar.

HVVi Semiconductors is a fabless semiconductor company located in Phoenix, Arizona that manufactures high performance silicon RF power transistors. The company’s patented HVVFET™ is an impressive transistor architecture that combines high current density with high voltage operation. The transistor structure greatly reduces device parasitics which results in frequency performance greater than 10 times that of other vertical transistors, and has superior gain, linearity and ruggedness over bipolar transistors. In 2008, HVVi launched its first product families for the pulsed RF transistor market. Pulsed RF transistors are used in a variety of applications such as military/avionics, medical, and industrial technologies. These markets have been historically served by bipolar transistor technology, and LDMOS has made little penetration due to reliability issues. HVVi is poised to disrupt bipolar’s hold on the market due to the HVVFET’s superior gain, linearity, and ruggedness performance improvement over bipolar.

HVVi Semiconductors is a fabless semiconductor company located in Phoenix, Arizona that manufactures high performance silicon RF power transistors. The company’s patented HVVFET™ is an impressive transistor architecture that combines high current density with high voltage operation. The transistor structure greatly reduces device parasitics which results in frequency performance greater than 10 times that of other vertical transistors, and has superior gain, linearity and ruggedness over bipolar transistors. In 2008, HVVi launched its first product families for the pulsed RF transistor market. Pulsed RF transistors are used in a variety of applications such as military/avionics, medical, and industrial technologies. These markets have been historically served by bipolar transistor technology, and LDMOS has made little penetration due to reliability issues. HVVi is poised to disrupt bipolar’s hold on the market due to the HVVFET’s superior gain, linearity, and ruggedness performance improvement over bipolar.

HVVi Semiconductors is a fabless semiconductor company located in Phoenix, Arizona that manufactures high performance silicon RF power transistors. The company’s patented HVVFET™ is an impressive transistor architecture that combines high current density with high voltage operation. The transistor structure greatly reduces device parasitics which results in frequency performance greater than 10 times that of other vertical transistors, and has superior gain, linearity and ruggedness over bipolar transistors. In 2008, HVVi launched its first product families for the pulsed RF transistor market. Pulsed RF transistors are used in a variety of applications such as military/avionics, medical, and industrial technologies. These markets have been historically served by bipolar transistor technology, and LDMOS has made little penetration due to reliability issues. HVVi is poised to disrupt bipolar’s hold on the market due to the HVVFET’s superior gain, linearity, and ruggedness performance improvement over bipolar.

HVVi Semiconductors is a fabless semiconductor company located in Phoenix, Arizona that manufactures high performance silicon RF power transistors. The company’s patented HVVFET™ is an impressive transistor architecture that combines high current density with high voltage operation. The transistor structure greatly reduces device parasitics which results in frequency performance greater than 10 times that of other vertical transistors, and has superior gain, linearity and ruggedness over bipolar transistors. In 2008, HVVi launched its first product families for the pulsed RF transistor market. Pulsed RF transistors are used in a variety of applications such as military/avionics, medical, and industrial technologies. These markets have been historically served by bipolar transistor technology, and LDMOS has made little penetration due to reliability issues. HVVi is poised to disrupt bipolar’s hold on the market due to the HVVFET’s superior gain, linearity, and ruggedness performance improvement over bipolar.